TPC8216-H 2009-02-23 1 toshiba field effect transistor silicon n-channel mos type (u-mos -h) TPC8216-H high efficiency dc-dc converter applications notebook pc applications portable-equipment applications ? small footprint due to a small and thin package ? high-speed switching ? small gate charge: q sw = 3.4 nc (typ.) ? low drain-source on-resistance: r ds (on) = 13.6 m (typ.) ? high forward transfer admittance: |y fs | = 19 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain? source voltage v dss 30 v drain? gate voltage (r gs = 20 k ) v dgr 30 v gate? source voltage v gss 20 v d c (note 1) i d 6.4 drain current pulse (note 1) i dp 25.6 a single-device operation (note 3a) p d (1) 1.5 drain power dissipation (t = 10 s) (note 2a) single-device value at dual operation (note 3b) p d (2) 1.1 w single-device operation (note 3a) p d (1) 0.75 drain power dissipation (t = 10 s) (note 2b) single-device value at dual operation (note 3b) p d 2) 0.45 w single-pulse avalanche energy (note 4) e as 53 mj avalanche current i ar 6.4 a repetitive avalanche energy (note 2a, note 3b, note 5) e ar 0.13 mj channel temperature t ch 150 storage temperature range t stg ?55 to 150 note: for notes 1 to 4, refer to the next page. using continuously under heavy loads (e.g. the app lication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating? concep t and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-6j1e weight: 0.085 g (typ.) circuit configuration 8 7 6 5 1 2 3 4
TPC8216-H 2009-02-23 2 thermal characteristics characteristic symbol max unit single-device operation (note 3a) r th (ch-a) (1) 83.3 thermal resistance, channel to ambient (t = 10 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 114 single-device operation (note 3a) r th (ch-a) (1) 167 thermal resistance, channel to ambient (t = 10 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 278 c/w marking note 1: ensure that the channel temperature does not exceed 150c. note 2: (a) device mounted on a glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: a) the power dissipation and thermal resistance values are shown for a single device (during single-device operation, power is only applied to one device.) b) the power dissipation and thermal resistance values are shown for a single device (during dual operation, power is evenly applied to both devices.) note 4: v dd = 24 v, t ch = 25c (initial), l = 1.0 mh, r g = 25 , i ar = 6.4 a note 5: repetitive rating: pulse width limited by maximum channel temperature note 6: ? on the lower left of the marking indicates pin 1. * weekly code: (three digits) week of manufacture (01 for the first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the year) fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) tpc8216 h lot no. note part no. (or abbreviation code) note: a line under a lot no. identifies the indication of product labels. [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/95/ ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
TPC8216-H 2009-02-23 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cutoff current i dss v ds = 30 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? v drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 15 ? ? gate threshold voltage v th v ds = 10 v, i d = 0.1 ma 1.3 ? 2.3 v r ds (on) v gs = 4.5 v, i d = 3.2 a ? 16.5 23.0 drain-source on-resistance r ds (on) v gs = 10 v , i d = 3.2 a ? 13.6 20.0 m forward transfer admittance |y fs | v ds = 10 v , i d = 3.2 a 9.5 19 ? s input capacitance c iss ? 900 1170 reverse transfer capacitance c rss ? 65 104 output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 200 ? pf gate resistance rg v ds = 10 v, v gs = 0 v, f = 5 mhz ? 2.5 3.6 rise time t r ? 2.3 ? turn-on time t on ? 7.0 ? fall time t f ? 9.2 ? switching time turn-off time t off ? 28 ? ns v dd 24 v, v gs = 10 v, i d = 6.4 a ? 14 ? total gate charge (gate-source plus gate-drain) (note 7) q g v dd 24 v, v gs = 5 v, i d = 6.4 a ? 7.6 ? gate-source charge 1 q gs1 ? 2.4 ? gate-drain (?miller?) charge q gd ? 2.5 ? gate switch charge q sw v dd 24 v, v gs = 10 v, i d = 6.4 a ? 3.4 ? nc source? drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 25.6 a forward voltage (diode) v dsf i dr = 6.4 a, v gs = 0 v ? ? ? 1.2 v r l = 4.7 v dd 15 v 0 v v gs 10 v 4.7 i d = 3.2 a duty 1%, t w = 10 s
TPC8216-H 2009-02-23 4 1 0.1 1 10 10 100 100 v gs = 4.5 v 10 0.1 100 0.1 1 100 10 10 1 ta = ? 55c 100 25 0 0.2 0.3 0 2 4 6 8 10 0.1 1.6 i d = 6.4 a 3.2 0 0 1 2 3 4 10 6 8 2 4 5 100 ta = ? 55c i d ? v ds 3 3.8 v gs = 2.6 v 2.8 3.6 3.2 15 10 5 0 20 0 0.8 1.6 1.2 0.4 2 3.4 5 6 10 4 i d ? v ds 10 6 4 0 8 2 0 0.2 0.4 0.6 0.8 1 3.6 3.2 3.1 2.8 v gs = 2.6 v 2.7 2.9 3 3.4 6 10 4 drain-source voltage v ds (v) drain current i d (a) drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ) drain current i d (a) ? y fs ? ? i d forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs common source ta = 25c pulse test common source ta =2 5 c pulse test common source v ds = 10 v pulse test common source ta = 25 pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test
TPC8216-H 2009-02-23 5 0 0.5 1 1.5 2.5 ? 80 ? 40 0 40 80 120 160 2 3 v ds = 24 v v gs 6 v dd = 24 v 12 0 4 12 16 50 20 10 30 40 0 8 20 8 4 12 16 0 6 12 2 10 14 6 2 0 0 50 150 1.2 1.6 200 0.8 0.4 100 (1) (2) (3) (4) c iss c oss c rss 10 0.1 100 1000 10000 1 10 100 1 3 4.5 10 v gs = 0 v 0 0.1 ? 0.2 10 100 ? 0.6 ? 0.8 ? 1.0 ? 0.4 ? 1.2 1 160 ? 40 0 40 80 120 ? 80 30 25 20 10 5 0 i d = 1.6,3.2,6.4 a v gs = 4.5 v v gs = 10 v i d = 1.6,3.2,6.4 a 15 drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta ambient temperature ta (c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ) total gate charge q g (nc) drain-source voltage v ds (v) dynamic input/output characteristics gate-source voltage v gs (v) ambient temperature ta (c) p d ? ta drain power dissipation p d (w) device mounted on a glass-epoxy board (a) (note 2a) (1)single-device operation (note 3a) (2)single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3)single-device operation (note 3a) (4)single-device value at dual operation (note 3b) t=10s common source v gs = 0 v f = 1 mhz ta = 25c common source pulse test common source ta = 25c pulse test common source v ds = 10 v i d = 0.1 ma pulse test common source i d = 6.4 a ta = 25c pulse test
TPC8216-H 2009-02-23 6 0.1 10 100 0.1 10 1 100 t =1ms * v dss max 10ms * 0.01 1 (2) ( 3 ) (1) (4) 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 0.1 pulse width t w (s) transient thermal impedance r th (c/w) drain current i d (a) drain-source voltage v ds (v) safe operating area r th ? t w r th ? t w device mounted on a glass-epoxy board (a) (note 2a) (1)single-device opration (note 3a) (2)single-device value at dual opration (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3)single-device opration (note 3a) (4)single-device value at dual opration (note 3b) t = 10s single - pulse single-device value at dual opration (note 3b) i d max (pulse) * * single pulse ta=25 curves must be derated linearly with increase in temperature.
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